Hot carrier degradation and ESD in submicrometer CMOS technologies: How do they interact?GROESENEKEN, Guido V.IEEE transactions on device and materials reliability. 2001, Vol 1, Num 1, pp 23-32, issn 1530-4388, 10 p.Article

Infos 2005: Proceedings of the 14th Biennal Conference on Insulating Films on Semiconductors, June 22-24, 2005, Leuven, BelgiumGROESENEKEN, Guido; KACZER, Ben.Microelectronic engineering. 2005, Vol 80, issn 0167-9317, 491 p.Conference Proceedings

Innovative technologies for high density non-volatile semiconductor memoriesBEZ, Roberto.Microelectronic engineering. 2005, Vol 80, pp 249-255, issn 0167-9317, 7 p.Conference Paper

Relation between breakdown mode and location in short-channel nMOSFETs and its impact on reliability specificationsDEGRAEVE, Robin; KACZER, Ben; DE KEERSGIETER, An et al.IEEE transactions on device and materials reliability. 2001, Vol 1, Num 3, pp 163-169, issn 1530-4388, 7 p.Article

MOSFET ESD breakdown modeling and parameter extraction in advanced CMOS technologiesVASSILEV, Vesselin; LORENZINI, Martino; GROESENEKEN, Guido et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 9, pp 2108-2117, issn 0018-9383, 10 p.Article

Point defects in HfO₂ high K gate oxideXIONG, K; ROBERTSON, J.Microelectronic engineering. 2005, Vol 80, pp 408-411, issn 0167-9317, 4 p.Conference Paper

Scaling CMOS: Finding the gate stack with the lowest leakage currentKAUERAUF, Thomas; GOVOREANU, Bogdan; DEGRAEVE, Robin et al.Solid-state electronics. 2005, Vol 49, Num 5, pp 695-701, issn 0038-1101, 7 p.Article

Infrared properties of ultrathin oxides on Si(100)GIUSTINO, Feliciano; PASQUARELLO, Alfredo.Microelectronic engineering. 2005, Vol 80, pp 420-423, issn 0167-9317, 4 p.Conference Paper

A novel methodology for sensing the breakdown location and its application to the reliability study of ultrathin Hf-silicate gate dielectricsCRUPI, Felice; KAUERAUF, Thomas; DEGRAEVE, Robin et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 8, pp 1759-1765, issn 0018-9383, 7 p.Article

Point defects at interfacial layers in stacks of (100)Ge with nm-thin HfO₂ and GeO_x(N_y) insulators probed by electron spin resonanceSTESMANS, A; AFANAS'EV, V. V.Microelectronic engineering. 2005, Vol 80, pp 22-25, issn 0167-9317, 4 p.Conference Paper

Performance and new effects in advanced SOI devices and materialsBALESTRA, Francis; JOMAAH, Jalal.Microelectronic engineering. 2005, Vol 80, pp 230-240, issn 0167-9317, 11 p.Conference Paper

Ab initio study of charged states of H in amorphous SiO₂GODET, Julien; PASQUARELLO, Alfredo.Microelectronic engineering. 2005, Vol 80, pp 288-291, issn 0167-9317, 4 p.Conference Paper

Improved NBTI Reliability With Sub-1-Nanometer EOT ZrO₂ Gate Dielectric Compared With HfO₂CHO, Moonju; KACZER, Ben; KAUERAUF, Thomas et al.IEEE electron device letters. 2013, Vol 34, Num 5, pp 593-595, issn 0741-3106, 3 p.Article

Repair and capping of porous MSQ films using chlorosilanes and supercritical CO₂XIE, B; CHOATE, L; MUSCAT, A. J et al.Microelectronic engineering. 2005, Vol 80, pp 349-352, issn 0167-9317, 4 p.Conference Paper

Accurate and robust noise-based trigger algorithm for soft breakdown detection in ultrathin gate dielectricsROUSSEL, Philippe J; DEGRAEVE, Robin; VAN DEN BOSCH, Geert et al.IEEE transactions on device and materials reliability. 2001, Vol 1, Num 2, pp 120-127, issn 1530-4388, 8 p.Article

Impact of design factors and environment on the ESD sensitivity of MEMS micromirrorsSANGAMESWARAN, Sandeep; DE COSTER, Jeroen; GROESENEKEN, Guido et al.Microelectronics and reliability. 2010, Vol 50, Num 9-11, pp 1383-1387, issn 0026-2714, 5 p.Conference Paper

Investigation of simultaneous fluorine and carbon incorporation in a silicon oxide dielectric layer grown by PECVDALTSHULER, S; CHAKK, Y; ROZENBLAT, A et al.Microelectronic engineering. 2005, Vol 80, pp 42-45, issn 0167-9317, 4 p.Conference Paper

Negative Bias Temperature Instability (NBTI) in SiO₂ and SiON gate dielectrics understood through disorder-controlled kineticsKACZER, B; ARKHIPOV, V; JURCZAK, M et al.Microelectronic engineering. 2005, Vol 80, pp 122-125, issn 0167-9317, 4 p.Conference Paper

Dielectric breakdown in SiO₂ via electric field induced attached hydrogen defectsTAHIR-KHELI, Jamil; MIYATA, M; GODDARD, W. A et al.Microelectronic engineering. 2005, Vol 80, pp 174-177, issn 0167-9317, 4 p.Conference Paper

Electrical properties of Al₂O₃/ZrO₂/Al₂O₃ gate stack in p-substrate metal oxide semiconductor devicesZHEN XU; KACZER, Ben; DEGRAEVE, Robin et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 5, pp G307-G310, issn 0013-4651Article

Reliability of electron devices, failure physics and analysisGROESENEKEN, Guido; MAES, Herman E; MOUTHAAN, Anton J et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, issn 0026-2714, 352 p.Conference Proceedings

Impact of High-Mobility Materials on the Performance of Near- and Sub-Threshold CMOS Logic CircuitsCRUPI, Felice; ALBANO, Domenico; ALIOTO, Massimo et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 3, pp 972-977, issn 0018-9383, 6 p.Article

Analysis of defects at the interface between high-k thin films and (100) siliconJONES, B. J; BARKLIE, R. C.Microelectronic engineering. 2005, Vol 80, pp 74-77, issn 0167-9317, 4 p.Conference Paper

Use of ferroelectric gate insulator for thin film transistors with ITO channelTOKUMITSU, E; SENOO, M; MIYASAKO, T et al.Microelectronic engineering. 2005, Vol 80, pp 305-308, issn 0167-9317, 4 p.Conference Paper

Investigating ESD sensitivity in electrostatic SiGe MEMSSANGAMESWARAN, Sandeep; DE COSTER, Jeroen; LINTEN, Dimitri et al.Journal of micromechanics and microengineering (Print). 2010, Vol 20, Num 5, issn 0960-1317, 055005.1-055005.9Article